Study of Analog/Rf and Stability Investigation of Surrounded Gate Junctionless Graded Channel MOSFET(SJLGC MOSFET)

This paper explores the potential advantage of surrounded gate junctionless graded channel (SJLGC) MOSFET in view its Analog, RF performances using ATLAS TCAD device simulator. The impact lateral direction on potential, electric field, and velocity carriers, energy band along is investigated systematically. present work mainly emphasises superior performance SJLGC by showing higher drain current (ID), transconductance (gm) ,cut off frequency (fT), maximum oscillation (fmax), critical (fK) .The improved 10.03 % due to grading channel. There an improvement fT, fmax, fK 45 %, 29 18 respectively better Performance. dominance over SJL further elucidated 74 intrinsic voltage gain (gm/gds) indicating applications sub threshold region. But generation factor less than subthreshold delay (ζD) comparison lower capacitance (CGG) suggesting digital switching applications. simulation results reveal that can be a competitive contender for coming circuits covering broad range operating frequencies spectrum.